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Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
(Amer Inst PhysicsWoodburyEUA, 1999)
On the onset of InAs islanding on InP: influence of surface steps
(Elsevier Science BvAmsterdamHolanda, 1997)
Raman and FTIR Spectroscopy of GaSb and AlxGai.xSb Alloys with Nanometric Thickness Grown at Low Temperatures by Liquid Phase Epitaxy
(2012-12-17)
GaSb and AlxGai.xSb thin layers were grown on (001) oriented GaSb substrates by liquid phase epitaxy technique at low
temperatures. Until now, there are no previous reports on the growth of this alloy at temperatures lower ...
Self-assembled islands on strained systems: Control of formation, evolution, and spatial distribution
(American Physical SocCollege PkEUA, 1998)
Chemical synthesis and epitaxial growth methods for the preparation of ferroelectric ceramics and thin films
(2018-01-01)
Ferroelectric materials have constantly attracted scientific interest because of their technological applications. The efficiency of ferroelectrics materials is related to the way they are processed because characteristics ...
Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy
(2012-11-26)
Raman scattering spectroscopy was used to measure and analyze the lattice
vibrations in some quaternary Ga1-xInxAsySb1-y alloys with low (In, As) contents, (0.03 <x<
0.12 and 0.03 <y< 0.10). The layers were grown by ...
PROPERTIES OF ALXGA1-XAS WITH AN ALAS BUFFER LAYER ON SI SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
(Elsevier Science BvAmsterdamHolanda, 1991)
Structural characterization by HRXRD and Raman scattering of AlxGa1_ xSb/GaSb heterostructure
(2012-11-27)
- High resolution X-ray diffraction profiles were obtained from Al,Ga 1 .,Sb layers grown on (00 l) GaSb substrates by Liquid Phase Epitaxy (LPE). The out of plane lattice parameter was estimated directly ...
Influence of substrate conductivity on layer thickness in LPE GaAs
(2012-11-26)
Differences have been foundon the growth rate of epitaxial layers grown simultaneously on semi-insulating andP
andN type (1 0 0) GaAs substrates from the same Ga–As liquidsolution. The layers were grown by LPE at 786 C ...